Pin Diode Laser Detector

Silicon pin photodiodes are available with a wide variety of active areas to accommodate many varied applications.

Pin diode laser detector.

A further use of the pin diode is as a photo detector photodetector or photo diode where its structure is particularly suited to absorbing light. A pin diode comprises a near intrinsic semiconductor region usually the space charge region sandwiched between a p type diode and an n type substrate. The pin photodiode structure allows high quantum efficiency and fast response for detection of photons in the 400nm to 1100nm range. The p type and n type regions are typically heavily doped because they are used for ohmic contacts.

The diode in which the intrinsic layer of high resistivity is sandwiched between the p and n region of semiconductor material such type of diode is known as the pin diode. For higher demands ingaas is used. Silicon pin photodiodes are reverse biased pin diodes which detect light and generate current as a result. Osi laser diode inc.

The electric field induces because of the movement of the holes and the electrons. The pin photodiode structure has an intrinsic layer within the depletion region which allows high quantum efficiency and fast response for detection of photons. A pin diode p type intrinsic n type diode is a diode with a wide region of intrinsic semiconductor material undoped contained between a p type semiconductor and an n type semiconductor. The high resistive layer of the intrinsic region provides the large electric field between the p and n region.

However the term is also used for components with inverse conductivity provided that no other non linear effects are utilized in the component. Pin photodiode has an intrinsic very lightly doped semiconductor region sandwiched between a p doped and an n doped region as shown below. The wide intrinsic region is in contrast to an ordinary p n diode the wide intrinsic region makes the pin diode an inferior rectifier one typical. A pin diode is a diode with a wide undoped intrinsic semiconductor region between a p type semiconductor and an n type semiconductor region.

The most common semiconductor photodetector is the pin photodiode as shown below. Pin photodiodes convert light to current without a bias voltage having to be applied. The pin diode receives its name from the fact that is has three main layers. Rather than just having a p type and an n type layer the pin diode has three layers.

1310 nm and 1550 nm. Ldi pinamps provide a low cost high performance miniature optical receiver module which integrates a high speed high responsivity low leakage current ingaas photodiode with a gaas transimpedance amplifier. Silicon pin photodiodes are reverse biased pin diodes which detect light and generate current as a result. Silicon is commonly used as an inexpensive detector material in the vis range.

The advantage of a pin diode is that the depletion region exists almost completely within the intrinsic region which has a constant width or almost constant regardless of disturbances applied to the diode. Silicon pin photodiodes are available with a wide variety of active areas to accommodate many varied applications.